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Simulation S/W  STR
 

 

▶▶FETIS : Modeling of HEMT and FET structure
▶▶STREEM InGaN : Modeling of III-Nitride devices
▶▶SimuLED : Modeling of optoelectronic and electronic devices
▶▶CVDSim 3D : Modeling of epitaxy, MOVPE of Nitrides
▶▶CGSim : Cz, Ky, HEM crystal growth from the melt
▼▼ Virtual Reactor : PVT, CVD and HVPE bulk crystal growth of SiC, AlN, GaN, Si, III-V and II-VI
■  [제품]  Virtual Reactor
l Virtual Reactor is a family of two-dimensional software tools designed

    for the simulation of long-term growth of bulk crystals from the vapor phase.

l Virtual Reactor is supplied as one of the following editions:

   1. Physical Vapor Transport editions

      - For growth of SiC crystals: VR-PVT SiC

      - For growth of AlN crystals: VR-PVT AlN

   2. Chemical Vapor Deposition edition

      - For growth of SiC crystals: VR-CVD SiC

      - For growth of Si crystals : VR-CVD Si

   3. Hydride Vapor Phase Epitaxy edition

      - For growth of GaN crystals: HEpiGaNS (Hydride Epitaxial GaN Simulator)

   4. Metal Organic Vapor Epitaxy

      - For growth of GaN, AlN, InGaN, and AlInN : VR-Nitride

      - For growth of AlAs, AlP, GaAs, GaP, InAs, InP, AlGaAs, InGaAs, InGaP and AlInGaP : VR-III-V

      - For growth of ZnS and ZnSe : VR-II-VI

   5. Chemical Vapor Infiltration

      - For production of SiC-matrix composites : VR-CVI SiC

 

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