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Simulation S/W  STR
 

 

▶▶FETIS : Modeling of HEMT and FET structure
▶▶SimuLED : Modeling of optoelectronic and electronic devices
▶▶CVDSim 3D : Modeling of epitaxy, MOVPE of Nitrides
▶▶Virtual Reactor : PVT, CVD and HVPE bulk crystal growth of SiC, AlN, GaN, Si, III-V and II-VI
▶▶CGSim : Cz, Ky, HEM crystal growth from the melt
▼▼ STREEM InGaN : Modeling of III-Nitride devices
■  [제품]  STREEM InGaN

STREEM-InGaN (STRain Engineering in Electronic Materials)

lSTREEM-InGaN is a specialized software tool for modeling the characteristics of (0001) III-Nitride device heterostructures grown by MOCVD from conventional metal-organic precursors (TMIn, TMGa/TEGa, TMAl) and ammonia, diluted in H2/N2 carrier gases.

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