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Simulation S/W  STR
 

 

▶▶STREEM InGaN : Modeling of III-Nitride devices
▶▶SimuLED : Modeling of optoelectronic and electronic devices
▶▶CVDSim 3D : Modeling of epitaxy, MOVPE of Nitrides
▶▶Virtual Reactor : PVT, CVD and HVPE bulk crystal growth of SiC, AlN, GaN, Si, III-V and II-VI
▶▶CGSim : Cz, Ky, HEM crystal growth from the melt
▼▼ FETIS : Modeling of HEMT and FET structure
■  [제품]  FETIS

FETIS (Field Effect Transistor Integrated Simulator)
lThe FETIS software is developed for modeling of group-III nitride-based high electron-mobility field-effect transistors (HEMTs).

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